Samsung just introduced a chip 256GB destined to take place in mobile devices such as smartphones and tablets. The maximum storage capacity of mobile devices is going to double, while the flow approaches more and more of those SSDs.
While most mobile device manufacturers use in memory running on an eMMC protocol, there is another protocol called UFS. Derived from the SCSI protocol, it allows in particular to obtain more memory to speed much higher than the eMMC type memories. It is thus subject to a maximum theoretical bandwidth of 1.2 GB / s UFS 2.0 against 600 MB / s eMMC 5.1. Caution, however, UFS 2.0 chips can run on one or two lines. On one line, the maximum is only 600 MB / s
Samsung produces such chips and now offers 256 GB model. – The maximum was far from 128GB all confused protocols. This chip uses V-NAND, that is to say, the memory cells stacked vertically so as to obtain a higher density. The rates are also very high since the Korean advance 850 MB / s sequential read, well above most SSD -. 2.5 models “peak at 500 MB / s Random access also remain a good standard – though lower than in the SSD. – speaking of 45,000 and 40,000 IOPS random read and write
Overall, these rates are two times higher than those of the chip embedded memory in Samsung Galaxy S6, for example. this uses a chip UFS 2.0, but running on a single line. a good omen for the future Galaxy S8 or any other high-end terminal which will be equipped.
While most mobile device manufacturers use in memory running on an eMMC protocol, there is another protocol called UFS. Derived from the SCSI protocol, it allows in particular to obtain more memory to speed much higher than the eMMC type memories. It is thus subject to a maximum theoretical bandwidth of 1.2 GB / s UFS 2.0 against 600 MB / s eMMC 5.1. Caution, however, UFS 2.0 chips can run on one or two lines. On one line, the maximum is only 600 MB / s
Samsung produces such chips and now offers 256 GB model. – The maximum was far from 128GB all confused protocols. This chip uses V-NAND, that is to say, the memory cells stacked vertically so as to obtain a higher density. The rates are also very high since the Korean advance 850 MB / s sequential read, well above most SSD -. 2.5 models “peak at 500 MB / s Random access also remain a good standard – though lower than in the SSD. – speaking of 45,000 and 40,000 IOPS random read and write
Overall, these rates are two times higher than those of the chip embedded memory in Samsung Galaxy S6, for example. this uses a chip UFS 2.0, but running on a single line. a good omen for the future Galaxy S8 or any other high-end terminal which will be equipped.
No comments:
Post a Comment